NoMIS to lead SiC device-level packaging and supply 3.3 kV SiC MOSFETs including its upcoming 25 mΩ device. The 3.3 kV portfolio is also available to other DC-GRIDS teams. ALBANY, N.Y. , May 15, 2026 /PRNewswire/ -- NoMIS Power Corporation, a leader in advanced Silicon Carbide (SiC) power semiconductor technology, today announced its participation as an industry partner in a three-year, $2.5 million project led by Michigan State University (PI: Dr. Omid Beik) to develop high-voltage SiC-based Neutral Point Clamped Power Electronics Building Blocks (NPC-PEBBs) as vendor-agnostic, plug-and-play submodules for modular valves in multiport multiterminal HVDC (MT-HVDC) converters. The project was selected under the U.S. Department of Energy's Advanced Research Projects Agency–Energy (ARPA-E) Disruptive DC Converters for Grid Resilient Infrastructure to Deliver Sustainable energy (DC-GRIDS) program and will leverage NoMIS Power's 3.3 kV SiC MOSFET portfolio , including its upcoming 25 mΩ 3.3 kV device . The project consortium includes NoMIS Power, EPRI, OPAL-RT Technologies, GE Grid Solutions, the National Renewable Energy Laboratory (NREL), Salt River Project, and Minnesota Power. The DC-GRIDS program targets transformative HVDC technologies that could substantially expand U.S. transmission capacity to support electrification, surging demand from data centers, and integration of resources such as offshore wind. MT-HVDC converters are the backbone of long-distance, high-capacity power transmission and the leading architecture for high-capacity data ... Full story available on Benzinga.com
NoMIS Power Joins ARPA-E DC-GRIDS Consortium, Supplying 3.3 kV SiC MOSFETs for High-Voltage HVDC Submodules
